DOINGTER DON100N10T

DOINGTER · FETs & Power MOSFETs · MPN DON100N10T

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Specifications

Gate Charge(Qg)57nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)4.3mΩ
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 100V 100A Surface Mount DFN5x6-8

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