DOINGTER DOD9N20

DOINGTER · FETs & Power MOSFETs · MPN DOD9N20

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Specifications

Configuration-
Gate Charge(Qg)2.3nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation82W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)300mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 200V 9A 82W Surface Mount TO-252

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