DOINGTER DOD8N06

DOINGTER · FETs & Power MOSFETs · MPN DOD8N06

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)1nC@10V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation16W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)349pF
TypeN-Channel

Technical details

N-Channel 60V 8A 16W Surface Mount TO-252

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