DOINGTER · FETs & Power MOSFETs · MPN DOD85N10-L
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 1.319nF |
| Current - Continuous Drain(Id) | 85A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 7.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.399nF |
| Type | N-Channel |
N-Channel 100V 85A 120W Surface Mount TO-252