DOINGTER DOD85N02

DOINGTER · FETs & Power MOSFETs · MPN DOD85N02

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)38nC@10V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation47W
RDS(on)2.8mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

20V 85A 750mV 47W 2.8mΩ@4.5V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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