DOINGTER DOD80N06

DOINGTER · FETs & Power MOSFETs · MPN DOD80N06

No reviews yet — be the first to review DOINGTER DOD80N06.

Specifications

Gate Charge(Qg)90.3nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)272pF
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.2nF
TypeN-Channel

Technical details

N-Channel 60V 80A 83W Surface Mount TO-252

Related FETs & Power MOSFETs