DOINGTER DOD75N04

DOINGTER · FETs & Power MOSFETs · MPN DOD75N04

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Specifications

Configuration-
Gate Charge(Qg)46nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation58W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)6.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.95nF
TypeN-Channel

Technical details

N-Channel 40V 75A 58W Surface Mount TO-252

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