DOINGTER DOD75N02

DOINGTER · FETs & Power MOSFETs · MPN DOD75N02

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)31nC@4.5V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)385pF
RDS(on)5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.499nF
TypeN-Channel

Technical details

N-Channel 20V 75A 57W Surface Mount TO-252

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