DOINGTER DOD68N06

DOINGTER · FETs & Power MOSFETs · MPN DOD68N06

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Specifications

Gate Charge(Qg)17.9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)194.1pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation81W
Reverse Transfer Capacitance (Crss@Vds)9.9pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.024nF
TypeN-Channel

Technical details

N-Channel 60V 68A 81W Surface Mount TO-252

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