DOINGTER DOD65P04

DOINGTER · FETs & Power MOSFETs · MPN DOD65P04

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)229pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation79W
RDS(on)11mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)169pF
Number1 P-Channel
Input Capacitance(Ciss)3.403nF
TypeP-Channel

Technical details

P-Channel 40V 65A 79W Surface Mount TO-252

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