DOINGTER · FETs & Power MOSFETs · MPN DOD65N10
No reviews yet — be the first to review DOINGTER DOD65N10.
| Gate Charge(Qg) | 34nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 839pF |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 58W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.499nF |
| Type | N-Channel |
N-Channel 100V 65A 58W Surface Mount TO-252