DOINGTER DOD65N04

DOINGTER · FETs & Power MOSFETs · MPN DOD65N04

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Specifications

Gate Charge(Qg)17.5nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)567pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)902pF
TypeN-Channel

Technical details

N-Channel 40V 65A 44W Surface Mount TO-252

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