DOINGTER · FETs & Power MOSFETs · MPN DOD639B
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| Output Capacitance(Coss) | 230pF;237pF |
|---|---|
| Pd - Power Dissipation | 55W |
| Configuration | - |
| Gate Charge(Qg) | 25nC@4.5V;41nC@10V |
| Drain to Source Voltage | 40V;40V |
| Current - Continuous Drain(Id) | 60A;38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V;2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 148pF;225pF |
| RDS(on) | 4.2mΩ@10V;10.2mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 2.38nF;3.119nF |
N-Channel+P-Channel 40V 60A 55W Surface Mount TO-252-4