DOINGTER DOD629C

DOINGTER · FETs & Power MOSFETs · MPN DOD629C

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Specifications

Output Capacitance(Coss)210pF;150pF
Pd - Power Dissipation40W;45W
Configuration-
Gate Charge(Qg)25.2nC@10V;20.4nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)28A;35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;1.6V
RDS(on)10mΩ@10V;14mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)131pF;135pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.396nF;1.43nF

Technical details

N-Channel+P-Channel 40V 35A 45W Surface Mount TO-252-4

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