DOINGTER DOD619B

DOINGTER · FETs & Power MOSFETs · MPN DOD619B

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Specifications

Output Capacitance(Coss)-
Pd - Power Dissipation40W
Configuration-
Gate Charge(Qg)10nC@8V;7.9nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V;2V
Reverse Transfer Capacitance (Crss@Vds)67.5pF
RDS(on)14mΩ@10V;20mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)979pF

Technical details

N-Channel+P-Channel 40V 25A 40W Surface Mount TO-252-4

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