DOINGTER DOD617S

DOINGTER · FETs & Power MOSFETs · MPN DOD617S

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Specifications

Output Capacitance(Coss)119pF;140pF
Pd - Power Dissipation22W;23W
Configuration-
Drain to Source Voltage30V
Gate Charge(Qg)9.5nC@4.5V;50nC@10V
Current - Continuous Drain(Id)30A;22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V;1.5V
RDS(on)7.5mΩ@10V;19mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)95pF;130pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)890pF;1.05nF

Technical details

N-Channel+P-Channel 30V 30A 23W Surface Mount TO-252-4

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