DOINGTER DOD60P03

DOINGTER · FETs & Power MOSFETs · MPN DOD60P03

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Specifications

Gate Charge(Qg)84nC
Drain to Source Voltage30V
Configuration-
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)342pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.15nF

Technical details

N-Channel 30V 60A 110W Surface Mount TO-252

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