DOINGTER DOD60N04

DOINGTER · FETs & Power MOSFETs · MPN DOD60N04

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation47W
RDS(on)6.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)160pF
Number1 N-channel
Input Capacitance(Ciss)2.38nF
TypeN-Channel

Technical details

N-Channel 40V 60A 47W Surface Mount TO-252

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