DOINGTER DOD60N03

DOINGTER · FETs & Power MOSFETs · MPN DOD60N03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)21nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.12nF
TypeN-Channel

Technical details

N-Channel 30V 60A 33W Surface Mount TO-252

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