DOINGTER DOD609D

DOINGTER · FETs & Power MOSFETs · MPN DOD609D

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Specifications

Output Capacitance(Coss)65pF
Pd - Power Dissipation28W;20W
Configuration-
Drain to Source Voltage40V;40V
Gate Charge(Qg)12nC@8V
Current - Continuous Drain(Id)20A;12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
RDS(on)17mΩ@10V;40mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)55pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)620pF

Technical details

N-Channel+P-Channel 40V 20A 28W Surface Mount TO-252-4

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