DOINGTER · FETs & Power MOSFETs · MPN DOD607H
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| Gate Charge(Qg) | 7.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 78.7pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 60.9pF |
| RDS(on) | 18mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 490pF |
| Type | N-Channel + P-Channel |
30V 18A 1.65V 20W 18mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4D Single FETs, MOSFETs RoHS