DOINGTER DOD603B

DOINGTER · FETs & Power MOSFETs · MPN DOD603B

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)52pF
Current - Continuous Drain(Id)20A
Operating Temperature --50℃~+150℃
Pd - Power Dissipation21W
RDS(on)26mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)950pF
TypeN-Channel + P-Channel

Technical details

60V 20A 21W 26mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4 Single FETs, MOSFETs RoHS

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