DOINGTER DOD603

DOINGTER · FETs & Power MOSFETs · MPN DOD603

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Specifications

Output Capacitance(Coss)52pF;90pF
Pd - Power Dissipation23W;23W
Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)20.3nC@10V;37.6nC@10V
Current - Continuous Drain(Id)16A;18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V;1.5V
RDS(on)26mΩ@10V;80mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF;75pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.1nF;1.6nF

Technical details

N-Channel+P-Channel 60V 18A 23W Surface Mount TO-252-4

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