DOINGTER DOD5N20

DOINGTER · FETs & Power MOSFETs · MPN DOD5N20

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)6.6nC@10V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)23.1pF
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)289pF
TypeN-Channel

Technical details

N-Channel 200V 5A 33W Surface Mount TO-252

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