DOINGTER · FETs & Power MOSFETs · MPN DOD55N06-H
No reviews yet — be the first to review DOINGTER DOD55N06-H.
| Configuration | - |
|---|---|
| Drain to Source Voltage | 60V |
| Gate Charge(Qg) | 16nC@10V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 63W |
| Reverse Transfer Capacitance (Crss@Vds) | 151pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.045nF |
| Type | N-Channel |
N-Channel 60V 55A 63W Surface Mount TO-252