DOINGTER · FETs & Power MOSFETs · MPN DOD5521
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| Gate Charge(Qg) | 16.8nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 12A |
| Output Capacitance(Coss) | 48pF |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF |
| RDS(on) | 86mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
| Type | N-Channel + P-Channel |
100V 12A 2.5V 30W 86mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel TO-252-4 Single FETs, MOSFETs RoHS