DOINGTER · FETs & Power MOSFETs · MPN DOD50P06
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| Gate Charge(Qg) | 114nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 270W |
| Reverse Transfer Capacitance (Crss@Vds) | 211pF |
| RDS(on) | 25mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.399nF |
| Type | P-Channel |
P-Channel 60V 50A 270W Surface Mount TO-252