DOINGTER DOD50P03

DOINGTER · FETs & Power MOSFETs · MPN DOD50P03

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation75W
RDS(on)10mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)285pF
Number1 P-Channel
Input Capacitance(Ciss)2.35nF
TypeP-Channel

Technical details

P-Channel 30V 50A 75W Surface Mount TO-252

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