DOINGTER DOD50P02

DOINGTER · FETs & Power MOSFETs · MPN DOD50P02

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)-
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)10mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
Vgs±12V

Technical details

P-Channel 20V 50A 27W Surface Mount TO-252

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