DOINGTER DOD45P04

DOINGTER · FETs & Power MOSFETs · MPN DOD45P04

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Specifications

Gate Charge(Qg)40nC@4.5V
Drain to Source Voltage40V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation73.5W
Reverse Transfer Capacitance (Crss@Vds)203pF
RDS(on)15mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.063nF
TypeP-Channel

Technical details

P-Channel 40V 45A 73.5W Surface Mount TO-252

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