DOINGTER DOD442

DOINGTER · FETs & Power MOSFETs · MPN DOD442

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)47nC@10V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation75W
RDS(on)11mΩ@10V;15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)120pF
Number1 N-channel
Input Capacitance(Ciss)1.928nF
TypeN-Channel

Technical details

N-Channel 60V 50A Surface Mount TO-252

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