DOINGTER · FETs & Power MOSFETs · MPN DOD35P04
No reviews yet — be the first to review DOINGTER DOD35P04.
| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 16mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.05nF |
| Type | P-Channel |
P-Channel 40V 35A 60W Surface Mount TO-252