DOINGTER DOD30N10

DOINGTER · FETs & Power MOSFETs · MPN DOD30N10

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Specifications

Gate Charge(Qg)65nC@10V
Configuration-
Drain to Source Voltage100V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)99pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.857nF
TypeN-Channel

Technical details

N-Channel 100V 30A 88W Surface Mount TO-252

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