DOINGTER DOD30N04

DOINGTER · FETs & Power MOSFETs · MPN DOD30N04

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Specifications

Gate Charge(Qg)10nC@32V
Drain to Source Voltage40V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation31.3W
RDS(on)20mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)70pF
Number1 N-channel
Input Capacitance(Ciss)1.01nF
TypeN-Channel

Technical details

N-Channel 40V 30A 31.3W Surface Mount TO-252

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