DOINGTER DOD30N03-L

DOINGTER · FETs & Power MOSFETs · MPN DOD30N03-L

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Specifications

Gate Charge(Qg)9.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)35mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)750pF
TypeN-Channel

Technical details

N-Channel 30V 30A 25W Surface Mount TO-252

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