DOINGTER DOD30N02

DOINGTER · FETs & Power MOSFETs · MPN DOD30N02

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation20W
RDS(on)10mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)160pF
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 20V 30A 20W Surface Mount TO-252

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