DOINGTER DOD30100

DOINGTER · FETs & Power MOSFETs · MPN DOD30100

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)36nC@4.5V
Configuration-
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation88W
RDS(on)4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)177pF
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

N-Channel 30V 100A 88W Surface Mount TO-252

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