DOINGTER DOD25N10

DOINGTER · FETs & Power MOSFETs · MPN DOD25N10

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Specifications

Gate Charge(Qg)11nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)371pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation27W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number1 N-channel
Input Capacitance(Ciss)680pF
TypeN-Channel

Technical details

N-Channel 100V 25A 27W Surface Mount TO-252

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