DOINGTER DOD25N04

DOINGTER · FETs & Power MOSFETs · MPN DOD25N04

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Specifications

Gate Charge(Qg)1.3nC@4.5V
Drain to Source Voltage40V
Output Capacitance(Coss)119pF
Current - Continuous Drain(Id)25A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation26W
RDS(on)25mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)79pF
Number1 N-channel
Input Capacitance(Ciss)799pF
TypeN-Channel

Technical details

N-Channel 40V 25A 26W Surface Mount TO-252

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