DOINGTER DOD23P04

DOINGTER · FETs & Power MOSFETs · MPN DOD23P04

No reviews yet — be the first to review DOINGTER DOD23P04.

Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation34.7W
Reverse Transfer Capacitance (Crss@Vds)79.4pF
RDS(on)40mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.033nF
TypeP-Channel

Technical details

P-Channel 40V 23A 34.7W Surface Mount TO-252

Related FETs & Power MOSFETs