DOINGTER DOD20P10-A

DOINGTER · FETs & Power MOSFETs · MPN DOD20P10-A

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation54W
RDS(on)78mΩ@10V;86mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)73pF
Number1 P-Channel
Input Capacitance(Ciss)3.02nF
TypeP-Channel

Technical details

P-Channel 100V 20A 54W Surface Mount TO-252

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