DOINGTER · FETs & Power MOSFETs · MPN DOD20P10
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 119pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 66W |
| RDS(on) | 80mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 92pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.077nF |
| Type | P-Channel |
P-Channel 100V 20A 66W Surface Mount TO-252