DOINGTER DOD20N06

DOINGTER · FETs & Power MOSFETs · MPN DOD20N06

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)20.3nC@10V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation31W
RDS(on)36mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45.3pF
Number1 N-channel
Input Capacitance(Ciss)1.15nF
TypeN-Channel

Technical details

N-Channel 60V 20A 31W Surface Mount TO-252

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