DOINGTER · FETs & Power MOSFETs · MPN DOD15N65S
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 27nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 46W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.6pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 565pF |
650V 15A 3.5V 46W 200mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS