DOINGTER DOD120P02

DOINGTER · FETs & Power MOSFETs · MPN DOD120P02

No reviews yet — be the first to review DOINGTER DOD120P02.

Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)99nC@4.5V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation38W
RDS(on)3mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)1.067nF
Number1 P-Channel
Input Capacitance(Ciss)14.999nF
TypeP-Channel

Technical details

P-Channel 20V 120A 38W Surface Mount TO-252

Related FETs & Power MOSFETs