DOINGTER DOD120N04

DOINGTER · FETs & Power MOSFETs · MPN DOD120N04

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Specifications

Configuration-
Drain to Source Voltage40V
Gate Charge(Qg)64nC@10V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation108W
Reverse Transfer Capacitance (Crss@Vds)339pF
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.594nF
TypeN-Channel

Technical details

N-Channel 40V 120A 108W Surface Mount TO-252

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