DOINGTER DOD120N03

DOINGTER · FETs & Power MOSFETs · MPN DOD120N03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)31.6nC@10V
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)315pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4nF
TypeN-Channel

Technical details

N-Channel 30V 120A 100W Surface Mount TO-252

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