DOINGTER DOD10N06

DOINGTER · FETs & Power MOSFETs · MPN DOD10N06

No reviews yet — be the first to review DOINGTER DOD10N06.

Specifications

Gate Charge(Qg)15.7nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation96W
RDS(on)75mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)34pF
Number1 N-channel
Input Capacitance(Ciss)451.5pF
TypeN-Channel

Technical details

N-Channel 60V 10A 96W Surface Mount TO-252

Related FETs & Power MOSFETs