DOINGTER DOD100N08T

DOINGTER · FETs & Power MOSFETs · MPN DOD100N08T

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Specifications

Gate Charge(Qg)51.2nC@10V
Drain to Source Voltage85V
Output Capacitance(Coss)1.0532nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation240W
RDS(on)5.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23.1pF
Number1 N-channel
Input Capacitance(Ciss)3.52nF
TypeN-Channel

Technical details

N-Channel 85V 100A 240W Surface Mount TO-252

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