DOINGTER DOD100N04

DOINGTER · FETs & Power MOSFETs · MPN DOD100N04

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Specifications

Gate Charge(Qg)-
Configuration-
Drain to Source Voltage40V
Output Capacitance(Coss)266pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation142W
Reverse Transfer Capacitance (Crss@Vds)223pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.777nF

Technical details

N-Channel 40V 100A 142W Surface Mount TO-252

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